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Two-dimensional transition metal dichalcogenide (TMD) phototransistors havebeen object of intensive research during the last years due to their potentialfor photodetection. Photoresponse in these devices is typically caused by acombination of two physical mechanisms: photoconductive effect (PCE) andphotogating effect (PGE). In earlier literature for monolayer (1L) MoS2phototransistors PGE is generally attributed to charge trapping by polarmolecules adsorbed to the semiconductor channel, giving rise to a very slowphotoresponse. Thus, the photoresponse of 1L-MoS2 phototransistors athigh-frequency light modulation is assigned to PCE alone. Here we investigatethe photoresponse of a fully h-BN encapsulated monolayer (1L) MoS2phototransistor. In contrast with previous understanding, we identify a rapidlyresponding PGE mechanism that becomes the dominant contribution tophotoresponse under high-frequency light modulation. Using a Hornbeck-Haynesmodel for the photocarrier dynamics, we fit the illumination power dependenceof this PGE and estimate the energy level of the involved traps. The resultingenergies are compatible with shallow traps in MoS2 caused by the presence ofsulfur vacancies.

Fast response photogating in monolayer MoS2 phototransistors