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Silicon-based light sources including light-emitting diodes (LEDs) and laserdiodes (LDs) for information transmission are urgently needed for developingmonolithic integrated silicon photonics. Silicon doped by ion implantation witherbium ions (Er$^{3+}$) is considered a promising approach, but suffers from anextremely low quantum efficiency. Here we report an electrically pumpedsuperlinear emission at 1.54 $\mu$m from Er/O-doped silicon planar LEDs, whichare produced by applying a new deep cooling process. Stimulated emission atroom temperature is realized with a low threshold current of ~6 mA (~0.8A/cm2). Time-resolved photoluminescence and photocurrent results disclose thecomplex carrier transfer dynamics from the silicon to Er3+ by relaxingelectrons from the indirect conduction band of the silicon. This picturediffers from the frequently-assumed energy transfer by electron-hole pairrecombination of the silicon host. Moreover, the amplified emission from theLEDs is likely due to a quasi-continuous Er/O-related donor band created by thedeep cooling technique. This work paves a way for fabricating superluminescentdiodes or efficient LDs at communication wavelengths based on rare-earth dopedsilicon.

Stimulated emission at 1.54 $\mu$m from Erbium/Oxygen-doped silicon-based light emitting diodes