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We theoretically investigate silicon doped bilayer graphene, Si-BLG, withdifferent stoichiometry of Si-BLG structures. The dangling bonds of C-Si atomsare found at low concentration ratio of Si atoms inducing sp$^3$-hybridizationof buckled pattern in the structure. The Si-BLG with dangling bonds revelstrong mechanical response at low strain of a uniaxial load, and the fracturestrain is seen at low strain ratio. The sp$^3$-hybridization forms a smallbandgap which induces an intermediate thermal and optical response of thesystem. In contrast, at higher Si concentration ratio, the Young modulus andfracture strain are increased comparing to the low Si concentration ratio. Thisis due to presence of high number of C-Si bonds which have a high tolerantunder uniaxial load. In addition, a relatively larger bandgap or an overlapbetween valence and conduction bands are found depending on the Siconfigurations. In the presence of gaped Si-BLG, the thermal and opticalresponse are high. We thus obtain a high Seebeck coefficient and a figure ofmerit with low electronic thermal conductivity which are useful forthermoelectric nanodevices, and an enhancement of optical response is acquiredwith a redshift in the visible range.

Properties of bilayer graphene-like Si$_{2}$C$_{14}$ semiconductor using first-principle calculations