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Heterojunction Si solar cells exhibit notable performance degradation. Wedeveloped the SolDeg platform to model this degradation as electronic defectsgetting generated by thermal activation across energy barriers over time.First, molecular dynamics simulations were performed to create a-Si/c-Sistacks, using a machine-learning-based Gaussian approximation potential.Second, we created shocked clusters by a cluster blaster. Third, the shockedclusters were analyzed to identify which of them supported electronic defects.Fourth, the distribution of energy barriers that control the generation ofthese electronic defects was determined. Fifth, an accelerated Monte Carlomethod was developed to simulate the thermally activated time dependent defectgeneration across the barriers. Our main conclusions are as follows. (1) Thedegradation of a-Si/c-Si stacks via defect generation is controlled by a broaddistribution of energy barriers. (2) We developed the SolDeg platform to trackthe microscopic dynamics of defect generation across this wide barrierdistribution, and determined the time dependent defect density $N(t)$ fromfemtoseconds to gigaseconds, over 24 orders of magnitude in time. (3) We haveshown that a stretched exponential analytical form can successfully describethe defect generation $N(t)$. (4) We found that in relative terms$V_\mathrm{oc}$ degrades at a rate of 0.2%/year over the first year, slowingwith advancing time. (5) We developed the Time Correspondence Curve tocalibrate and validate the accelerated testing of solar cells. We found acompellingly simple scaling relationship between accelerated and normal times$t_\mathrm{accelerated} \propto t_\mathrm{normal}^{0.85}$. (6) We ourselvescarried out experimental studies of defect generation in a-Si:H/c-Si stacks. Wefound a relatively high degradation rate at early times, that slowedconsiderably at longer time scales.

From Femtoseconds to Gigaseconds: The SolDeg Platform for the Performance Degradation Analysis of Silicon Heterojunction Solar Cells