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We present a plasmonic modulator based on hybrid orthogonal silver junctionsusing vanadium dioxide as the modulating material on the silicon on insulator.The modulator has an ultra-compact footprint of 1.8{\mu}m x 1{\mu}m with a100nm x 100nm modulating section based on the orthogonal geometry. We takeadvantage of large change in the refractive index of vanadium dioxide duringits phase transition to achieve a high modulation depth of 46.89dB/{\mu}m. Wealso provide a fabrication strategy for the development of this device. Thedevice geometry has potential applications in the development of nextgeneration high frequency photonic modulators for optical communications whichrequire a nanometer scale footprint, large modulation depth and small insertionlosses.

Design of on-chip plasmonic modulator with vanadium-dioxide in hybrid orthogonal junctions on Silicon-on-Insulator