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We present a detailed experimental optical study supported by theoreticalmodeling of InAs quantum dots (QDs) embedded in an InAlGaAs barrierlattice-matched to InP(001) grown with the use of a ripening step in molecularbeam epitaxy. The method leads to the growth of in-plane symmetric QDs of lowsurface density, characterized by a multimodal size distribution resulting in aspectrally broad emission in the range of $1.4-2.0$ $\mu$m, essential for manynear-infrared photonic applications. We find that, in contrast to the InAs/InPsystem, the multimodal distribution results here from a two-monolayerdifference in QD height between consecutive families of dots. This may stemfrom the long-range ordering in the quaternary barrier alloy that stabilizes QDnucleation. Measuring the photoluminescence (PL) lifetime of the spectrallybroad emission, we find a nearly dispersionless value of $1.3\pm0.3$ ns.Finally, we examine the temperature dependence of emission characteristics. Weunderline the impact of localized states in the wetting layer playing the roleof carrier reservoir during thermal carrier redistribution. We determine thehole escape to the InAlGaAs barrier to be a primary PL quenching mechanism inthese QDs.

Optical and electronic properties of symmetric InAs/InGaAlAs/InP quantum  dots formed by a ripening process in molecular beam epitaxy: a promising  system for broad-range single-photon telecom emitters