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Spins in semiconductor quantum dots are a candidate for cryogenic quantumprocessors due to their exceptionally long coherence times. One major challengeto scaling quantum dot spin qubits is the dense wiring requirements, making itdifficult to envision fabricating large arrays of nearest-neighbor-coupledqubits necessary for error correction. We describe a method to solve thisproblem by spacing the qubits out using high-impedance superconductingresonators with a 2D grid unit cell area of $0.16~\text{mm}^2$ using 3Dintegration. To prove the viability of this approach, we demonstrate 3Dintegration of a high-impedance TiN resonator coupled to a double quantum dotin a Si/SiGe heterostructure. Using the resonator as a dispersive gate sensor,we tune the device down to the single electron regime with an SNR = 5.36limited by the resonator-dot capacitance. Characterization of the dot andresonator systems shows such integration can be done while maintaining lowcharge noise metrics for the quantum dots and with improved loaded qualityfactors for the superconducting resonator ($Q_L = 2.14 \times 10^4$), allowingfor high-sensitivity charge detection and the potential for high fidelity2-qubit gates. This work paves the way for 2D quantum dot qubit arrays withcavity mediated interactions.

Dispersive measurement of a semiconductor double quantum dot via 3D integration of a high-impedance TiN resonator