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In the present work we study the growth by pulsed laser deposition ofYBa$_2$Cu$_3$O$_{7-\delta}$ (YBCO) films on the r-cut sapphire substrates. Toimprove the matching of the lattice parameters between the substrate and thefilm we use CeO$_{2}$ buffer layer, recrystallized prior to the deposition ofYBCO. The optimal thickness and temperature of recrystallization of the bufferlayer is first determined using atomic force microscopy (AFM) and X-raydiffraction. Next, we use the AFM to examine the dependence of YBCO filmroughness on the film thickness, and we study the homogeneity of magnetic fluxpenetration into the films by magneto-optical imaging. We find that thesuperconducting critical temperature and critical current density of thesefilms are very similar to those of YBCO films grown on well-matched substrates.It appears that the microstructure of YBCO films is affected by structuraldefects in the buffer layer as well as variations in oxygen deficiency, whichresults in high values of critical current density suitable for application.

Properties of YBa$_2$Cu$_3$O$_{7-\delta}$ films grown by pulsed laser deposition on CeO$_2$-buffered sapphire