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Refractory materials exhibit high damage tolerance, which is attractive forthe creation of nanoscale field-emission electronics and optoelectronicsapplications that require operation at high peak current densities and opticalintensities. Recent results have demonstrated that the optical properties oftitanium nitride, a refractory and CMOS-compatible plasmonic material, can betuned by adding silicon and oxygen dopants. However, to fully leverage thepotential of titanium (silicon oxy)nitride, a reliable and scalable fabricationprocess with few-nm precision is needed. In this work, we developed afabrication process for producing engineered nanostructures with gaps between10 and 15 nm, aspect ratios larger than 5 with almost 90{\deg} steep sidewalls.Using this process, we fabricated large-scale arrays of electrically-connectedbow-tie nanoantennas with few-nm free-space gaps. We measured a typicalvariation of 4 nm in the average gap size. Using applied DC voltages andoptical illumination, we tested the electronic and optoelectronic response ofthe devices, demonstrating sub-10-V tunneling operation across the free-spacegaps, and quantum efficiency of up to 1E-3 at 1.2 {\mu}m, which is comparableto a bulk silicon photodiode at the same wavelength. Tests demonstrated thatthe titanium silicon oxynitride nanostructures did not significantly degrade,exhibiting less than 5 nm of shrinking of the average gap dimensions overfew-{\mu}m^2 areas after roughly 6 hours of operation. Our results will beuseful for developing the next generation of robust and CMOS-compatiblenanoscale devices for high-speed and low-power field-emission electronics andoptoelectronics applications.

Refractory doped titanium nitride nanoscale field emitters