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In the Fe-doped GaN phase-separated magnetic semiconductor GaFeN, thepresence of embedded Ga$_y$Fe$_{4-y}$N nanocrystals determines the magneticproperties of the system. Here, through a combination of anomalous x-raydiffraction and diffraction anomalous fine structure, the local structure of Gain self-assembled face-centered cubic (fcc) Ga$_y$Fe$_{4-y}$N nanocrystalsembedded in wurtzite GaN thin layers is investigated in order to shed lightonto the correlation between fabrication parameters, local structuralarrangement and overall magnetic properties of the material system. It isfound, that by adjusting the growth parameters and thus, the crystallographicsurroundings, the Ga atoms can be induced to incorporate into 3$c$ positions atthe faces of the fcc crystal lattice, reaching a maximum occupancy of 30\%. Themagnetic response of the embedded nanocrystals is ferromagnetic with Curietemperature increasing from 450\,K to 500\,K with the Ga occupation. Theseresults demonstrate the outstanding potential of the employed experimentalprotocol for unravelling the local structure of magnetic multi-phase systems,even when embedded in a matrix containing the same element under investigation.

Unravelling the Local Crystallographic Structure of Ferromagnetic Ga$_y$Fe$_{4-y}$N Nanocrystals Embedded in GaN