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We present a simple liquid assisted processing (LAP) method, to be usedin-situ during pulsed laser deposition growth to give both rapid growth rates(50 Hz deposition leading to >250 nm/min with a single plume) and strongpinning (improved x 5-10 over plain standard YBCO films grown at similarrates). Achieving these two important features simultaneously has been aserious bottleneck to date. LAP enhances the kinetics of the film growth sothat good crystalline perfection can be achieved at up to 60 x faster growthrates than normal, while also enabling artificial pinning centres to be selfassembled into fine nanocolumns. In addition, LAP allows for RE mixing (80% ofY with 20% of Yb, Sm, or Yb+Sm), creating effective point-like disorder withinthe REBCO lattice and which leads to strongly improved pinning at 30 K andbelow. Overall, LAP is a simple method which could be adopted by other in-situphysical or vapour deposition methods (i.e PLD, MOCVD, evaporation, etc) tosignificantly enhance both growth rate and performance.

Strong pinning at high growth rates in Rare Earth Barium Cuprate