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The availability of transistors capable of operating at low supply voltage isessential to improve the key performance metric of computing circuits, i.e.,the number of operations per unit energy. In this paper, we propose a newdevice concept for energy-efficient, steep-slope transistors based onheterojunctions of 2D materials. We show that by injecting electrons from anisolated and weakly dispersive band into a strongly dispersive one,subthermionic subthreshold swings can be obtained, as a result of a cold-sourceeffect and of a reduced thermalization of carriers. This mechanism isimplemented by integrating in a MOSFET architecture two different monolayermaterials coupled through a van der Waals heterojunction, combining thesubthermionic behavior of tunnel field-effect transistors (FETs) with therobustness of a MOSFET architecture against performance-degrading factors, suchas traps, band tails and roughness. A further advantage with respect to tunnelFETs is that only an n-type or p-type doping is required to fabricate thedevice. In order to demonstrate the device concept and to discuss theunderlying physics and the design options, we study through abinitio andfull-quantum transport simulations a possible implementation that exploits tworecently reported 2D materials.

A cold-source paradigm for steep-slope transistors based on van der Waals heterojunctions