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Developing techniques for high-quality synthesis of mono and few-layered 2Dmaterials with lowered complexity and cost continues to remain an importantgoal, both for accelerating fundamental research and for applicationsdevelopment. We present the simplest conceivable technique to synthesizemicrometer-scale single-crystal triangular monolayers of MoS2, i.e. by directheating of bulk MoS2 powder onto proximally-placed substrates. Room-temperatureexcitonic linewidth values of our samples are narrower and more uniform thanthose of 2D-MoS2 obtained by most other techniques reported in literature, andcomparable to those of ultraflat h-BN-capped mechanically exfoliated samples,indicative of their high quality. Feature-rich Raman spectra absent in samplesgrown or obtained by most other techniques, also stand out as a testament ofthe high quality of our samples. A contact-growth mode facilitates directgrowth of crystallographically-strained circular samples, which allows us todirectly compare the optoelectronic properties of flat vs. strained growth fromthe same growth runs. Our method allows, for the first time, to quantitativelycompare the impact of strain on excitonic and Raman peak positions onidentically-synthesized 2D-MoS2. Strain leads to average Red-shifts of ~ 30 meVin the A-exciton position, and ~ 2 cm-1 in the E12g Raman peak in thesesamples. Our findings open-up several new possibilities that expand 2D materialresearch. By eliminating the need for carrier gas flow, mechanical motion orchemical reactions, our method can be either miniaturized for substantiallylow-cost, high-quality scientific research or potentially scaled-up formass-production of 2D crystals for commercial purposes. Moreover, we believethis technique can also be extended to other transition metal dichalcogenidesand other layered materials.

2D-MoS2 with Narrowest Excitonic Linewidths Grown by Flow-Less Direct Heating of Bulk Powders