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Recent advances in the brilliance of hard-X-ray beamlines and photoelectronmomentum microscopy facilitate bulk valence-band mapping andcore-level-resolved hard-X-ray photoelectron diffraction (hXPD) for structuralanalysis in the same setup. High-quality MBE-grown (In,Ga,Mn)As films representan ideal testing ground, because of the non-centrosymmetric GaAs crystalstructure itself and In and Mn doping concentrations of few percent. Here wepresent results of k-mapping and hXPD for the title compound with 3% In and 2.5or 5.6% Mn using hard X-ray photons (3 to 5 keV) at beamline P22 at PETRA III(DESY, Hamburg). Numerical processing (difference or ratio images) emphasizessubtle differences of hXPD patterns like the fingerprint-like hXPD-signaturesof As and Ga sites. XPD calculations using the Bloch-wave method show aone-to-one correspondence with the measurements. The hXPD results reveal apredominant Ga substitutional site for Mn. Valence band mapping shows that theFermi energy lies within the valence band and decreases as the Mn concentrationincreases. The results support the p-d Zener model of ferromagnetism in thetitle compound. In addition to the shift of the Fermi energy, the bandsplitting increases with increasing Mn content, which we attribute to anincrease of many-body correlations with increasing metallicity of the sample.

Hard X-ray Photoelectron Momentum Microscopy and Kikuchi Diffraction on (In,Ga,Mn)As Thin Films