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High-performance p-type oxide thin film transistors (TFTs) have greatpotential for many semiconductor applications. However, these devices typicallysuffer from low hole mobility and high off-state currents. We fabricated p-typeTFTs with a phase-pure polycrystalline Cu2O semiconductor channel grown byatomic layer deposition (ALD). The TFT switching characteristics were improvedby applying a thin ALD Al2O3 passivation layer on the Cu2O channel, followed byvacuum annealing at 300 C. Detailed characterisation by TEM-EDX and XPS showsthat the surface of Cu2O is reduced following Al2O3 deposition and indicatesthe formation of 1-2 nm thick CuAlO2 interfacial layer. This, together withfield-effect passivation caused by the high negative fixed charge of the ALDAl2O3, leads to an improvement in the TFT performance by reducing the densityof deep trap states as well as by reducing the accumulation of electrons in thesemiconducting layer in the device off-state.

Role of ALD Al2O3 surface passivation on the performance of p-type Cu2O thin film transistors