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Electronic devices are extremely sensitive to defects in their constituentsemiconductors, but locating electronic point defects in bulk semiconductorshas previously been impossible. Here we apply scanning transmission electronmicroscopy (STEM) electron beam-induced current (EBIC) imaging to mapelectronic defects in a GaAs nanowire Schottky diode. Imaging with anon-damaging 80 or 200 kV STEM acceleration potential reveals aminority-carrier diffusion length that decreases near the surface of thehexagonal nanowire, thereby demonstrating that the device's charge collectionefficiency (CCE) is limited by surface defects. Imaging with a 300 keV STEMbeam introduces vacancy-interstitial (VI, or Frenkel) defects in the GaAs thatincrease carrier recombination and reduce the CCE of the diode. We create,locate, and characterize a single insertion event, determining that a defectinserted 7 nm from the Schottky interface broadly reduces the CCE by 10% acrossthe entire nanowire device. Variable-energy STEM EBIC imaging thus allows bothbenign mapping and pinpoint modification of a device's e-h recombinationlandscape, enabling controlled experiments that illuminate the impact of bothextended (1D and 2D) and point (0D) defects on semiconductor deviceperformance.

Mapping Charge Recombination and the Effect of Point Defect Insertion in Gallium Arsenide Nanowire Heterojunctions