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In spintronics, one of the long standing questions is why the MgO-basedmagnetic tunnel junction (MTJ) is almost the only option to achieve a largetunnelling magnetoresistance (TMR) ratio at room temperature (RT) but not aslarge as the theoretical prediction. This study focuses on the development ofan almost strain-free MTJ using metastable bcc CoxMn100-x ferromagnetic films.We have investigated the degree of crystallisation in MTJ consisting ofCoxMn100-x/MgO/CoxMn100-x (x = 66, 75, 83 and 86) in relation to their TMRratios. Cross-sectional high resolution transmission electron microscopy(HRTEM) reveals that almost consistent lattice constants of these layers for 66< x < 83 with maintaining large TMR ratios of 229% at RT, confirming the softnature of the CoxMn100-x layer with some dislocations at the MgO/Co75Mn25interfaces. For x = 86, on the other hand, the TMR ratio is found to be reducedto 142% at RT, which is partially attributed to the increased number of thedislocations at the MgO/Co86Mn14 interfaces and amorphous grains identified inthe MgO barrier. Ab-initio calculations confirm the crystalline deformationstability across a broad compositional range in CoMn, proving the advantage ofa strain-free interface for much larger TMR ratios.

Lattice Softening in Metastable bcc CoxMn100-x(001) Ferromagnetic Layers for a Strain-Less Magnetic Tunnel Junction