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MgO-barrier magnetic tunnel junctions with half-metallic Heusler alloyelectrodes attracted much attentions for spintronics applications. However, acouples of issues related to materials still remain to be resolved forpractical uses. Recently, quarterly equiatomic Heusler alloys attractedattentions as advanced Heusler alloys. CoIrMnZ (Z = Al, Si, Ga, and Ge)half-metallic Heusler alloys were designed and predicted to have moderate Curietemperatures and to be a lattice-matched with the MgO barrier, beingadvantageous to traditional Co2 Heusler alloys [T. Roy et al., J. Magn. Magn.Mater. 498, 166092 (2020)]. Here we experimentally investigated structure andmagnetic properties for thin films of one of those alloys, CoIrMnAl with asputtering deposition. We successfully obtained the films with the B2 chemicalordering even with no post-annealing process. The lattice constant for thefilms annealed at 500-600$^\circ$C approximates the predicted values. Themagnetization at 10 K was near 500 kA/m and the Curie temperature wasapproximately 400 K were observed, which were about 70% of the values predictedfor the fully ordered structure. The magnetic properties observed in those B2ordered films were well explained by ferrimagnetism appeared in B2 orderedCoIrMnAl with full-swap disorders of Co-Ir and Mn-Al and almost full-swapdisorder of Co-Mn, predicted from the first-principles calculations.

Structural and magnetic properties of epitaxial films of CoIrMnAl equiatomic quaternary Heusler alloy designed from first-principles calculation