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Detecting conductance quantization in graphene nanostructures turned out morechallenging than expected. The observation of well-defined conductance plateausthrough graphene nanoconstrictions so far has only been accessible in thehighest quality suspended or h-BN encapsulated devices. However, reaching lowconductance quanta in zero magnetic field, is a delicate task even with suchultra-high mobility devices. Here, we demonstrate a simple AFM-basednanopatterning technique for defining graphene constrictions with highprecision (down to 10 nm width) and reduced edge-roughness (+/- 1 nm). Thepatterning process is based on the in-plane mechanical cleavage of graphene bythe AFM tip, along its high symmetry crystallographic directions. As-defined,narrow graphene constrictions with improved edge quality enable anunprecedentedly robust QPC operation, allowing the observation of conductancequantization even on standard $SiO_2/Si$ substrates, down to low conductancequanta. Conductance plateaus, were observed at $ne^2/h$, evenly spaced by$2e^2/h$ (corresponding to n = 3, 5, 7, 9, 11) in the absence of an externalmagnetic field, while spaced by $e^2/h$ (n = 1, 2, 3, 4, 5, 6) in 8T magneticfield.

Robust quantum point contact operation of narrow graphene constrictions patterned by AFM cleavage lithography