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Resistive memories have limited lifetime caused by limited write enduranceand highly non-uniform write access patterns. Two main techniques to mitigateendurance-related memory failures are 1) wear-leveling, to evenly distributethe writes across the entire memory, and 2) fault tolerance, to correct memorycell failures. However, one of the main open challenges in extending thelifetime of existing resistive memories is to make both techniques worktogether seamlessly and efficiently. To address this challenge, we proposeWoLFRaM, a new mechanism that combines both wear-leveling and fault tolerancetechniques at low cost by using a programmable resistive address decoder(PRAD). The key idea of WoLFRaM is to use PRAD for implementing 1) a newefficient wear-leveling mechanism that remaps write accesses to random physicallocations on the fly, and 2) a new efficient fault tolerance mechanism thatrecovers from faults by remapping failed memory blocks to available physicallocations. Our evaluations show that, for a Phase Change Memory (PCM) basedsystem with cell endurance of 108 writes, WoLFRaM increases the memory lifetimeby 68% compared to a baseline that implements the best state-of-the-artwear-leveling and fault correction mechanisms. WoLFRaM's average / worst-caseperformance and energy overheads are 0.51% / 3.8% and 0.47% / 2.1%respectively.

WoLFRaM: Enhancing Wear-Leveling and Fault Tolerance in Resistive Memories using Programmable Address Decoders