English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

Resistive-switching -- the current-/voltage-induced electrical resistancechange -- is at the core of memristive devices, which play an essential role inthe emerging field of neuromorphic computing. This study is about resistiveswitching in a Mott-insulator, which undergoes a thermally drivenmetal-to-insulator transition. Two distinct switching mechanisms were reportedfor such a system: electric-field-driven resistive switching and electrothermalresistive switching. The latter results from an instability caused by Jouleheating. Here, we present the visualization of the reversible resistiveswitching in a planar V$_2$O$_3$ thin-film device using high-resolutionwide-field microscopy in combination with electric transport measurements. Weinvestigate the interaction of the electrothermal instability with thestrain-induced spontaneous phase-separation in the V$_2$O$_3$ thin film at theMott-transition. The photomicrographs show the formation of a narrow metallicfilament with a minimum width $\lesssim$ 500\,nm. Although the filamentformation and the overall shape of the current-voltage characteristics (IVCs)are typical of an electrothermal breakdown, we also observe atypical effectslike oblique filaments, filament splitting, and hysteretic IVCs withsawtooth-like jumps at high currents in the low-resistance regime. We were ableto reproduce the experimental results in a numerical model based on atwo-dimensional resistor network. This model demonstrates that resistiveswitching, in this case, is indeed electrothermal and that the intrinsicheterogeneity is responsible for the atypical effects. This heterogeneity isstrongly influenced by strain, thereby establishing a link between switchingdynamics and structural properties.

Optical imaging of strain-mediated phase coexistence during electrothermal switching in a Mott insulator