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In this work, we investigated the effect of pitch distance on the statisticalvariation and morphology of extrusion in Cu TSVs and the underlying mechanisms.Extrusion statistics were obtained from TSV samples with two different pitchdistances. A notable increase in the magnitude of extrusion was observed invias with smaller pitch, yet the extrusion spread was largely unaffected. Themorphologies of the extruded vias were characterized and categorized, andfinite element analysis was carried out to study the effect of pitch distanceon stress and deformation. The results suggested that the overlapping of stressfields from neighboring vias resulted in larger stress in the small-pitch vias,which subsequently led to higher extrusion. The morphologies observed in theextruded vias were related to the operation of different deformation mechanismsunder the combined effect of stress and microstructure. The statistical spreadof via extrusion, which was similar in both groups of vias, was related to thestochastic nature of the via microstructure. By using a thin cap layer of Ta tosuppress the vacancy sources at the via top surface, the adverse effect of thepitch distance was minimized and a pronounced reduction of extrusion wasachieved in vias of both pitch distances.

The Effect of Pitch Distance on the Statistics and Morphology of Through-Silicon Via Extrusion