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To manufacture faster electron devices, the industry has entered into thenanoscale dimensions and Terahertz (THz) working frequencies. The discretenature of the few electrons present simultaneously in the active region ofultra-small devices generate unavoidable fluctuations of the current at THzfrequencies. The consequences of this noise remain unnoticed in the scientificcommunity because its accurate understanding requires dealing with consecutivemulti-time quantum measurements. Here, a modeling of the quantum measurement ofthe current at THz frequencies is introduced in terms of quantum (Bohmian)trajectories. With this new understanding, we develop an analytic model for THznoise as a function of the electron transit time and the sampling integrationtime, which finally determine the maximum device working frequency. The modelis confirmed by either semi-classical or full-quantum time-dependent MonteCarlo simulations. All these results show that intrinsic THz noise increasesunlimitedly when the volume of the active region decreases. All attempts tominimize the low signal-to-noise ratio of these ultra-small devices to geteffective THz working frequencies are incompatible with the basic elements ofthe scaling strategy. One can develop THz electron devices, but they cannothave ultra-small dimensions. Or, one can fabricate ultra-small electrondevices, but they cannot be used for THz working frequencies.

Noise and charge discreteness as ultimate limit for the THz operation of ultra-small electronic devices