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In atomically thin semiconductors, localized exciton (X$_L$) coupled to lightshows single quantum emitting behaviors through radiative relaxation processesproviding a new class of optical sources for potential applications in quantumcommunication. In most studies, however, X$_L$ photoluminescence (PL) fromcrystal defects has mainly been observed in cryogenic conditions because oftheir sub-wavelength emission region and low quantum yield at room temperature.Furthermore, engineering the radiative relaxation properties, e.g., emissionregion, intensity, and energy, remained challenging. Here, we present aplasmonic antenna with a triple-sharp-tips geometry to induce and control theX$_L$ emission of a WSe$_2$ monolayer (ML) at room temperature. By placing a MLcrystal on the two sharp Au tips in a bowtie antenna fabricated through cascadedomino lithography with a radius of curvature of <1 nm, we effectively inducetensile strain in the nanoscale region to create robust X$_L$ states. An Au tipwith tip-enhanced photoluminescence (TEPL) spectroscopy is then added to thestrained region to probe and control the X$_L$ emission. With TEPL enhancementof X$_L$ as high as ~10$^6$ in the triple-sharp-tips device, experimentalresults demonstrate the controllable X$_L$ emission in <30 nm area with a PLenergy shift up to 40 meV, resolved by tip-enhanced PL and Raman imaging with<15 nm spatial resolution. Our approach provides a systematic way to controllocalized quantum light in 2D semiconductors offering new strategies for activequantum nano-optical devices.

Radiative control of localized excitons at room temperature with an ultracompact tip-enhanced plasmonic nano-cavity