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We propose a novel binary and quaternary memory device based upon skyrmionstates induced by the oblique field in a square magnetic island. To describestable states and dynamics of the skyrmion, we employ the lattice model thatuses the parameters of a real material and accounts for all relevantinteractions. Depending on the orientation of the field, two or four spatiallyseparated energy minima emerge in the oblique field. The energy barriersbetween the minima can be controlled by the strength and orientation of themagnetic field. We study the dynamics of the skyrmion and show that it can bemoved between any two states by application of the field gradient. Islands ofthickness of a few tens of atomic layers permit room-temperature manipulationof the proposed device.

Skyrmions in an oblique field: A path to novel binary and quaternary memory