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Energy harvesting from shadow-effect is the generation of electrical powerfrom a Schottky junction when a part of it is kept in shadow and the remainingunder illumination. It has been recently invented in Au/n-Si junctions, wheremodulation of work function of the Au top electrode under contrastingillumination has been invoked to explain the effect. In this paper, a differentphysical mechanism for energy harvesting from shadow-effect in a Schottkyjunction is proposed that does not assume change in work function of the topelectrode under illumination. The device, termed shadow-effect energy generator(SEG), is modelled as two parallel Schottky junction solar cells, one at theshadowed and the other at the illuminated part, connected with each other in aclosed loop circuit through the Si substrate and the top electrode. To test theproposed mechanism, ITO/n-Si junction based SEGs have been fabricated. Thevalues of open circuit voltage in the SEGs have been found to be matching withthe difference of photovoltages of the two cells corrected for the potentialdrop across the Si substrate, that validates the proposed mechanism. To furthercorroborate the mechanism, the conventional SEG geometry has been modified byapplying a continuous ohmic coating at the back of the Si substrates thatbypasses the resistance of the Si substrate for current flow and results inhigher open circuit voltage and short circuit current. Moreover, ITO/n-Si basedSEGs have been found to produce higher output power density compared to thatreported in Au/n-Si devices in both the conventional and the new geometry.Although the closed loop present in the equivalent circuit of the SEG deviceslead to wastage of harvested energy, the ITO/n-Si SEG devices can neverthelessbe used as self-powered sensor for light, object and movement detection as wellas for producing electricity from contrasting illumination.

Enhanced energy harvesting from shadow-effect: mechanism and a new device geometry