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The attributes of group-V-donor spins implanted in an isotopically purified$^{28}$Si crystal make them attractive qubits for large-scale quantum computerdevices. Important features include long nuclear and electron spin lifetimes of$^{31}$P, hyperfine clock transitions in $^{209}$Bi and electricallycontrollable $^{123}$Sb nuclear spins. However, architectures for scalablequantum devices require the ability to fabricate deterministic arrays ofindividual donor atoms, placed with sufficient precision to enablehigh-fidelity quantum operations. Here we employ on-chip electrodes withcharge-sensitive electronics to demonstrate the implantation of singlelow-energy (14 keV) P$^+$ ions with an unprecedented $99.87\pm0.02$%confidence, while operating close to room-temperature. This permits integrationwith an atomic force microscope equipped with a scanning-probe ion aperture toaddress the critical issue of directing the implanted ions to preciselocations. These results show that deterministic single-ion implantation can bea viable pathway for manufacturing large-scale donor arrays for quantumcomputation and other applications.

Deterministic Single Ion Implantation with 99.87% Confidence for Scalable Donor-Qubit Arrays in Silicon