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In this work, the interaction of n-type dopants in Si doped (AlxGa1-x)2O3films with varying Al content over the entire composition range (x = 0-100%)was analyzed using atom probe tomography. An almost uniform dopant distributionwith dopant density in the range of 1018 cm-3 was obtained in all (AlxGa1-x)2O3layers containing different Al contents. We have demonstrated that for thesingle phase \b{eta}-(AlxGa1-x)2O3 films with Al content of x<0.30, dopantsprefer to occupy on Ga sites while Al site is preferred for high Al content(x>0.50) (AlxGa1-x)2O3 layers. It was also observed for Al content, x =0.30-0.50, no specific cationic site occupancy was observed, Si occupies eitherAl or Ga sites. This can be attributed to highly inhomogeneous layers withinthis composition range due to which dopant Si atoms are either in the Al-richor Al-depleted regions.

Direct observation of site-specific dopant substitution in Si doped (AlxGa1-x)2O3 via Atom Probe Tomography