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In this report, we demonstrate dual band vertical heterojunctionphotodetector realized by integrating {\alpha}-In2Se3 with p-type GaN. Flakesof ~ 110 nm thickness were exfoliated on MOCVD grown p-GaN on siliconsubstrate. Devices showed two distinct detection peaks in spectralresponsivity, one at 365 nm and another at 850 nm, corresponding to band edgesof GaN and {\alpha}-In2Se3 respectively, with considerable rejection in visiblespectrum. Normalised responsivity values were found out to be ~70 mA/W at both365 nm and 850 nm for the bias of -3V along with photo-to-dark current ratio of~665 and ~75 in that order. The Devices also showed fast transient responsewith no persistent photoconductivity (PPC). The specific detectivity valuesestimated were ~10^11 Jones and ~10^10 Jones corresponding to illumination at365 nm and 850 nm respectively. A good linearity of ~0.4 was observed in powerdependent analysis of spectral responsivity at 365 nm. The device performance,post annealing was also studied. This study is expected to pave way for newtype of optoelectronic devices by integrating direct bandgap layered materiallike {\alpha}-In2Se3 and wide bandgap semiconductors.

UV/Near-IR dual band photodetector based on p-GaN/{\alpha}-In2Se3 heterojunction