English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

The magnetic tunnel junction is a cornerstone of spintronic devices andcircuits, providing the main way to convert between magnetic and electricalinformation. In state-of-the-art magnetic tunnel junctions, magnesium oxide isused as the tunnel barrier between magnetic electrodes, providing a uniquelylarge tunnel magnetoresistance at room temperature. However, the wide bandgapand band alignment of magnesium oxide-iron systems increases theresistance-area product and causes challenges of device-to-device variabilityand tunnel barrier degradation under high current. Here, we study using firstprinciples narrower-bandgap scandium nitride tunneling properties and transportin magnetic tunnel junctions in comparison to magnesium oxide. Thesesimulations demonstrate a high tunnel magnetoresistance in Fe/ScN/Fe MTJs via{\Delta}_1 and {\Delta}_2' symmetry filtering with low wavefunction decayrates, allowing a low resistance-area product. The results show that scandiumnitride could be a new tunnel barrier material for magnetic tunnel junctiondevices to overcome variability and current-injection challenges.

Tunnel magnetoresistance in scandium nitride magnetic tunnel junctions using first principles