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In two-dimensional heterostructures, crystalline atomic layers with differinglattice parameters can stack directly one on another. The resultant closeproximity of atomic lattices with differing periodicity can lead to newphenomena. For umklapp processes, this opens the possibility for interlayerumklapp scattering, where interactions are mediated by the transfer of momentato or from the lattice in the neighbouring layer. Using angle-resolvedphotoemission spectroscopy to study a graphene on InSe heterostructure, wepresent evidence that interlayer umklapp processes can cause hybridizationbetween bands from neighbouring layers in regions of the Brillouin zone wherebands from only one layer are expected, despite no evidence for moir/'e-inducedreplica bands. This phenomenon manifests itself as 'ghost' anti-crossings inthe InSe electronic dispersion. Applied to a range of suitable 2DM pairs, thisphenomenon of interlayer umklapp hybridization can be used to create strongmixing of their electronic states, giving a new tool for twist-controlled bandstructure engineering.

Ghost anti-crossings caused by interlayer umklapp hybridization of bands in 2D heterostructures