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This paper reports a synergistic approach of READ and WRITE optimization bydeploying a high-precision digital computation unit along with a low-precisionferroelectric finFET (Fe-finFETs) based analog vector-matrix multiplicationblock for mitigating the impact of stochastic device variations in hafniumzirconium oxide (HZO) based Fe-finFETs.

Stochastic Variations in Nanoscale HZO based Ferroelectric finFETs: A  Synergistic Approach of READ Optimization and Hybrid Precision Mixed Signal  WRITE Operation to Mitigate the Implications on DNN Applications