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Two-dimensional (2D) bismuth oxyselenide (Bi2O2Se) with high electronmobility is advantageous in future high-performance and flexible electronic andoptoelectronic devices. However, transfer of thin Bi2O2Se flakes is ratherchallenging, restricting measurements of its mechanical properties andapplication exploration in flexible devices. Here, we develop a reliable andeffective polydimethylsiloxane (PDMS)-mediated method that allows transferringthin Bi2O2Se flakes from grown substrates onto target substrates likemicro-electro-mechanical system substrates. The high fidelity of thetransferred thin flakes stems from the high adhesive energy and flexibility ofPDMS film. For the first time, the mechanical properties of 2D Bi2O2Se areexperimentally acquired with nanoindentation method. We found that few-layerBi2O2Se exhibits a large intrinsic stiffness of 18-23 GPa among 2Dsemiconductors, and a Young' s modulus of 88.7 +- 14.4 GPa which is consistentwith the theoretical values. Furthermore, few-layer Bi2O2Se can withstand ahigh radial strain of more than 3%, demonstrating excellent flexibility. Thedevelopment of the reliable transfer method and documentation of mechanicalproperties of 2D Bi2O2Se jointly fill the gap between theoretical predictionand experimental verification of mechanical properties of this emergingmaterial, and will promote flexible electronics and optoelectronics based on 2DBi2O2Se.

High-Fidelity Transfer of 2D Bismuth Oxyselenide and its Mechanical Properties