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We have employed state-of-the-art cross-correlation noise spectroscopy tostudy carrier dynamics in silicon heterojunction solar cells, complimented bySENTARUS simulations of the same devices. These cells were composed of a lightabsorbing n-doped crystalline silicon layer contacted by passivating layers ofi-a-Si:H and doped a-Si:H electrode layers. The method provided atwo-orders-of-magnitude improved sensitivity and allowed to resolution of threeadditional contributions to noise in addition to 1/f noise. We have observedshot noise with Fano factor close to unity. We have also observed a peculiargeneration-recombination term, which presents only under light illuminationwith energy above 2 eV and thus reflects light absorption and carrier trappingin the a-Si:H layers. A second, low-frequency generation-recombination term wasdetected at temperatures below 100 K. We argue that it appears because theprocess of charge carrier transfer across i-a-Si:H occurs via an intermediatedefect limited by tunneling above about 100 K and a thermally assisted processbelow this temperature. We also discuss the spatial selectivity of noisespectroscopy, namely the tendency of the method to amplify noise contributionsfrom the most resistive element of the cell. Indeed, in our case, all threeterms are linked to the passivating i-a-Si:H layer.

Silicon heterojunction solar cells explored via noise spectroscopy: spatial selectivity and the influence of a-Si passivating layers