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Controlling the stacking of van der Waals (vdW) materials is found to produceexciting new findings, since hetero- or homo- structures have added the diversepossibility of assembly and manipulated functionalities. However, so far, thehomostructure with a twisted angle based on the magnetic vdW materials remainsunexplored. Here, we achieved a twisted magnetic vdW Fe3GeTe2/Fe3GeTe2 junctionwith broken crystalline symmetry. A clean and metallic vdW junction isevidenced by the temperature-dependent resistance and the linear I-V curve.Unlike the pristine FGT, a plateau-like magnetoresistance (PMR) is observed inthe magnetotransport of our homojunction due to the antiparallel magneticconfigurations of the two FGT layers. The PMR ratio is found to be ~0.05% andgets monotonically enhanced as temperature decreases like a metallic giantmagnetoresistance (GMR). Such a tiny PMR ratio is at least three orders ofmagnitude smaller than the tunneling magnetoresistance (TMR) ratio, justifyingour clean metallic junction without a spacer. Our findings demonstrate thefeasibility of the controllable homostructure and shed light on futurespintronics using magnetic vdW materials.

Observation of plateau-like magnetoresistance in twisted Fe3GeTe2/Fe3GeTe2 junction