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Dielectric interfaces critical for metal-oxide-semiconductor (MOS) electronicdevices, such as the Si/SiO$_2$ MOS field effect transistor (MOSFET), possesstrap states that can be visualized with electrically-detected spin resonancetechniques, however the interpretation of such measurements has been hamperedby the lack of a general theory of the phenomena. This article presents such atheory for two electrical spin-resonance techniques, electrically detectedmagnetic resonance (EDMR) and the recently observed near-zero fieldmagnetoresistance (NZFMR), by generalizing Shockley Read Hall trap-assistedrecombination current calculations via stochastic Liouville equations. Spinmixing at this dielectric interface occurs via the hyperfine interaction, whichwe show can be treated either quantum mechanically or semiclassically, yieldingdistinctive differences in the current across the interface. By analyzing thebias dependence of NZFMR and EDMR, we find that the recombination in aSi/SiO$_2$ MOSFET is well understood within a semiclassical approach.

Near-Zero-Field Spin-Dependent Recombination Current and Electrically Detected Magnetic Resonance from the Si/SiO$_2$ interface