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Small-angle X-ray scattering from GaN nanowires grown on Si(111) is studiedexperimentally and modeled by means of Monte Carlo simulations. It is shownthat the scattering intensity at large wave vectors does not follow Porod's law$I(q)\propto q^{-4}$. The intensity depends on the orientation of the sidefacets with respect to the incident X-ray beam. It is maximum when thescattering vector is directed along a facet normal, as a reminiscence of thesurface truncation rod scattering. At large wave vectors $q$, the scatteringintensity is found to be decreased by surface roughness. A root mean squareroughness of 0.9~nm, which is the height of just 3--4 atomic steps per micronlong facet, already gives rise to a strong intensity reduction.

Small-angle X-ray scattering from GaN nanowires on Si(111): facet truncation rods, facet roughness, and Porod's law