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We report on efficient spin injection in p-doped InGaAs/GaAs quantum-dot (QD)spin light emitting diode (spin-LED) under zero applied magnetic field. A highdegree of electroluminescence circular polarization (Pc) ~19% is measured inremanence up to 100K. This result is obtained thanks to the combination of aperpendicularly magnetized CoFeB/MgO spin injector allowing efficient spininjection and an appropriate p-doped InGaAs/GaAs QD layer in the active region.By analyzing the bias and temperature dependence of the electroluminescencecircular polarization, we have evidenced a two-step spin relaxation process.The first step occurs when electrons tunnel through the MgO barrier and travelacross the GaAs depletion layer. The spin relaxation is dominated by theDyakonov-Perel mechanism related to the kinetic energy of electrons, which ischaracterized by a bias dependent Pc. The second step occurs when electrons arecaptured into QDs prior to their radiative recombination with holes. Thetemperature dependence of Pc reflects the temperature induced modification ofthe QDs doping, together with the variation of the ratio between the chargecarrier lifetime and the spin relaxation time inside the QDs. The understandingof these spin relaxation mechanisms is essential to improve the performance ofspin LED for future spin optoelectronic applications at room temperature underzero applied magnetic field.

Spin-injection and spin-relaxation in p-doped InGaAs/GaAs quantum-dot spin light emitting diode at zero magnetic field