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Amorphous hydrogenated silicon nitride($\textit{a}$-SiN$_\mathrm{\textit{x}}$:H) thin films irradiated with 100 MeVNi$^{7+}$ results in the formation of continuous ion track structures at thelower fluence of $5\times{10^{12}}$ ions/cm$^2$ whereas at higher fluence of$1\times{10^{14}}$ ions/cm$^2$ the track structures fragment into discontinuousion track like structures . The observation of the discontinuous ion track likestructures at the high fluence of $1\times{10^{14}}$ ions/cm$^2$ shows clearlythat higher fluence irradiation may not always lead to dissolution of themicrostructure formed at lower fluence. The results are understood on the basisof a dynamic electronic energy loss (S$_{e}$) in the course of irradiationresulting from the out-diffusion of hydrogen from the films and a continuousincrease in density of $\textit{a}$-SiN$_\mathrm{\textit{x}}$:H films.

Evolution of ion track morphology in a-SiNx:H by dynamic electronic energy loss