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Two-dimensional electron gases (2DEGs) at the ZnO/ZnMgO interface arepromising for applications in spintronics and quantum computing due to thecombination of low spin-orbit coupling and high electron mobility. Growing highmobility 2DEGs requires high quality substrates with low impurity densities. Inthis work we demonstrate a ZnO substrate sample treatment combining hightemperature rapid thermal annealing and chemical etching to improve the surfacequality for the subsequent growth of 2DEGs. This process enables the growth ofa 2DEG with low-temperature mobility of $4.8\times10^4$~cm$^2$V$^{-1}$s$^{-1}$.An unannealed control sample shows a scattering rate at least three timesgreater than the annealed sample.

Rapid Thermal Annealing for Surface Optimisation of ZnO Substrates for MBE-Grown Oxide Two-Dimensional Electron Gases