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The dielectric permittivity of a material encapsulates the essential physicsof light-matter interaction into the material's local response to opticalexcitation. Dynamic, photo-induced modulation of the permittivity can enable anunprecedented level of control over the phase, amplitude, and polarization oflight. Therefore, the detailed dynamic characterization of technology-relevantmaterials with substantially tunable optical properties and fast response timesis a crucial step in the realization of tunable optical devices. This workreports on the extraordinarily large permittivity changes in zinc oxide thinfilms (up to -3.6 relative change in the real part of the dielectricpermittivity at 1600 nm wavelength) induced by optically generated freecarriers. We demonstrate broadband reflectance modulation up to 70 percent inmetal-backed oxide mirrors at the telecommunication wavelengths, withpicosecond-scale relaxation times. The epsilon near zero points of the filmscan be dynamically shifted from 8.5 microns to 1.6 microns by controlling thepump fluence. Finally, we show that the modulation can be selectively enhancedat specific wavelengths employing metal-backed ZnO disks while maintainingpicosecond-scale switching times. This work provides insights into thefree-carrier assisted permittivity modulation in zinc oxide and could enablethe realization of novel dynamic devices for beam-steering, polarizers, andspatial light modulators.

Extraordinarily Large Permittivity Modulation in Zinc Oxide for Dynamic Nanophotonics