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We report a new approach for monolithic integration of III-V materials intosilicon, based on selective area growth and driven by a molten alloy inmetal-organic vapor epitaxy. Our method includes elements of both selectivearea and droplet-mediated growths and combines the advantages of the twotechniques. Using this approach, we obtain organized arrays of high crystallinequality InP insertions into (100) oriented Si substrates. Our detailedstructural, morphological and optical studies reveal the conditions leading todefect formation. These conditions are then eliminated to optimize the processfor obtaining dislocation-free InP nanostructures grown directly on Si andburied below the top surface. The PL signal from these structures exhibits anarrow peak at the InP bandgap energy. The fundamental aspects of the growthare studied by modeling the InP nucleation process. The model is fitted by ourx-ray diffraction measurements and correlates well with the results of ourtransmission electron microscopy and optical investigations. Our methodconstitutes a new approach for the monolithic integration of active III-Vmaterial into Si platform and opens up new opportunities in active Siphotonics.

Monolithic integration of InP on Si by molten alloy driven selective area epitaxial growth