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Spectroscopic studies of semiconductor quantum dots (SQDs) addressing theproblem of non-radiative carrier losses is vital for the improvement in theefficiency of various light-emitting devices. Various designs of SQDs emitterlike doping, forming core-shell and alloying has been attempted to suppressnon-radiative recombination. In this article, we show that forming a hybridwith metal nanoparticles (MNP) having localized surface plasmon resonanceoverlapped with the emission spectrum of SQD, the non-radiative carrier lossvia Auger recombination can be mitigated. Using steady-state and time-resolvedphotoluminescence, it has been shown that when such hybrid is selectivelyexcited well above the bandgap without exciting plasmon, the contribution tofast decay time reduces along with an increase in contributions to longer decaytimes. A completely reverse kinetics is observed when exciton and plasmon aresimultaneously excited. Such control of photoluminescence kinetics by placingMNP near SQD opens up a new method for designing hybrid materials that are wellsuited for light-emitting devices.

Role of Auger Recombination in Plasmon Controlled Photoluminescence Kinetics in Metal-Semiconductor Hybrid Nanostructures