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This work presents the design of beta-Ga2O3 schottky barrier diode usinghigh-k dielectric superjunction to significantly enhance the breakdown voltagevs on-resistance trade-off beyond its already high unipolar figure of merit.The device parameters are optimized using both TCAD simulations and analyticalmodeling using conformal mapping technique. The dielectric superjunctionstructure is found to be highly sensitive to the device dimensions and thedielectric constant of the insulator. The aspect ratio, which is the ratio ofthe length to the width of the drift region, is found to be the most importantparameter in designing the structure and the proposed approach only works foraspect ratio much greater than one. The width of the dielectric layer and thedielectric constant also plays a crucial role in improving the deviceproperties and are optimized to achieve maximum figure of merit. Using theoptimized structure with an aspect ratio of 10 and a dielectric constant of300, the structure is predicted to surpass the b-Ga2O3 unipolar figure of meritby four times indicating the promise of such structures for exceptional FOMvertical power electronics.

Analytical Modeling and Design of Gallium Oxide Schottky Barrier Diodes  Beyond Unipolar Figure of Merit Using High-k Dielectric Superjunction  Structures