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The qualities of Physical Unclonable Functions (PUFs) suffer from severalnoticeable degradations due to silicon aging. In this paper, we investigate thelong-term effects of silicon aging on PUFs derived from the start-up behaviorof Static Random Access Memories (SRAM). Previous research on SRAM aging isbased on transistor-level simulation or accelerated aging test at hightemperature and voltage to observe aging effects within a short period of time.In contrast, we have run a long-term continuous power-up test on 16 ArduinoLeonardo boards under nominal conditions for two years. In total, we collectedaround 175 million measurements for reliability, uniqueness and randomnessevaluations. Analysis shows that the number of bits that flip with respect tothe reference increased by 19.3% while min-entropy of SRAM PUF noise improvesby 19.3% on average after two years of aging. The impact of aging onreliability is smaller under nominal conditions than was previously assessed bythe accelerated aging test. The test we conduct in this work more closelyresembles the conditions of a device in the field, and therefore we moreaccurately evaluate how silicon aging affects SRAM PUFs.

Long-term continuous assessment of SRAM PUF and source of random numbers