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Interface modes have been widely explored in the field of electronics,optics, acoustics and nanophononics. One strategy to generate them is bandinversion in one-dimensional superlattices. Most realizations of this type oftopological states have so far been explored for a single kind of excitation.Despite its potential in the manipulation and engineering of interactions,platforms for the simultaneous topological confinement of multiple excitationsremain an open challenge. GaAs/AlAs heterostructures exhibit enhancedoptomechanical interactions due to the intrinsic colocalization of light andsound. In this work, we designed, fabricated, and experimentally studied amultilayered structure based on GaAs/AlAs. Due to the simultaneously invertedband structures for light and phonons, colocalized interface modes for both1.34 eV photons and 18 GHz phonons appear. We experimentally validated theconcept by optical reflectivity and coherent phonon generation and detection.Furthermore, we theoretically analyzed the performance of different topologicaldesigns presenting colocalized states in time-domain Brillouin scattering anddeduce engineering rules. Potential future applications include the engineeringof robust optomechanical resonators, compatible with the incorporation ofactive media such as quantum wells and quantum dots.

Topological optical and phononic interface mode by simultaneous band inversion