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Neuromorphic computing (NC) is gaining wide acceptance as a potentialtechnology to achieve low-power intelligent devices. To realize NC, researchersinvestigate various types of synthetic neurons and synaptic devices such asmemristors and spintronic domain wall (DW) devices. In comparison, DW-basedneurons and synapses have potentially higher endurance. However, for realizinglow-power devices, DW motion at low energies - typically below pJ/bit - areneeded. Here, we demonstrate domain wall motion at current densities as low as1E6 A/m2 by tailoring the beta-W spin Hall material. With our design, weachieve ultra-low pinning fields and current density reduction by a factor of10000. The energy required to move the domain wall by a distance of about 20micrometers is 0.4 fJ, which translates into energy consumption of 0.4 aJ/bitfor a bit-length of 20 nm. With a meander domain wall device configuration, wehave established a controlled DW motion for synapse applications and have shownthe direction to make ultra-low energy spin-based neuromorphic elements.

Ultra-low Power Domain Wall Device for Spin-based Neuromorphic Computing