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We propose a general physics-based approach for an accurate analyticalcalculation of the channel charge density in field-effect transistors asfunctions of the external gate biases. This approach is based on a consistentconsideration of basic electrostatic equation as a balance of electric andchemical potentials which allows us to obtain in a unified way the explicitanalytic expressions continuously de-scribing the subthreshold and abovethreshold regions in nanosheet (symmetric and asymmetric) and nanowire FETs.Two conceptually different definitions of phenomenological threshold voltageare consistently introduced and discussed.

Analytical Physics-Based Modeling of Electron Channel Density in Nanosheet and Nanowire FETs