English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

Ferroelectric oxides have attracted much attention due to their wide range ofapplications, especially in electronic devices such as nonvolatile memories andtunnel junctions. As a result, the monolithic integration of these materialsinto silicon technology and its nanostructuration to develop alternativecost-effective processes are among the central points in current technology. Inthis work, we used a chemical route to obtain nanowire thin films of a novelSr1+{\delta}Mn8O16 (SMO) hollandite-type manganese oxide on silicon. Scanningtransmission electron microscopy combined with crystallographic computingreveals a crystal structure comprising hollandite and pyrolusite units sharingthe edges of their MnO6 octahedra, resulting in three types of tunnels arrangedalong the c axis, where ordering of the Sr atoms produces a natural symmetrybreaking. The novel structure gives rise to a ferroelectricity andpiezoelectricity, as revealed by local Direct Piezoelectric Force Microscopymeasurements, which confirmed the ferroelectric nature of SMO nanowire thinfilms at room temperature and showed a piezoelectric coefficient d33 value of22,6 pC/N. Moreover, we proved that flexible vertical SMO nanowires can beharvested and converted into electric output energy through the piezoelectriceffect, showing an excellent deformability and high interface recombination.This work indicates the possibility of engineering the integration of 1Dmanganese oxides on silicon, a step which precedes the production ofmicroelectronic devices.

Crystal Engineering and Ferroelectricity at the Nanoscale in Epitaxial 1D Manganese Oxide on Silicon