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Polycrystalline PbSe for mid-wave IR (MWIR) photodetector is an attractivematerial option due to high operating/ambient temperature operation andrelatively easy and cheap fabrication process, making it candidate forlow-power and small footprint applications such as internet-of-thing (IoT)sensors and deployment on mobile platforms due to reduced/removed activecooling requirements. However, there are many material challenges that reducethe detectivity of these detectors. In this work, we demonstrate that it ispossible to improve upon this metric by externally modulating the lifetime ofconducting carriers by application of a back-gate voltage that can control therecombination rate of generated carrier. We first describe the physics of$PbSe$ detectors, the mechanisms underlying carrier transport, and longobserved lifetimes of conducting carriers. We then discuss the voltage controlof these inverted channels using a back-plane gate resulting in modulation ofthe lifetime of these carriers. This voltage control represents and extrinsic"knob" through which it may be possible to open a pathway for design of highperformance IR photodetectors, as shown in this work.

Extrinsic Voltage Control of Carrier Lifetime in Polycrystalline PbSe Mid-wave IR Photo Detectors for Increased Detectivity